CBI 2N7002K

CBI · FETs & Power MOSFETs · MPN 2N7002K

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Specifications

Output Capacitance(Coss)25pF
Pd - Power Dissipation350mW
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF

Technical details

350mW 60V 1V 3Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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