Bruckewell MSQ100N03D

Bruckewell · FETs & Power MOSFETs · MPN MSQ100N03D

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)158mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.021nF
TypeN-Channel

Technical details

N-Channel 100V 2.3A 2.5W Surface Mount SOP-8

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