Bruckewell MSHM60N29D

Bruckewell · FETs & Power MOSFETs · MPN MSHM60N29D

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Specifications

Gate Charge(Qg)15.8nC@10V
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)15mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

60V 29A 2.5V 21W 15mΩ@10V 2 N-Channel N-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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