Bruckewell MSD60N50

Bruckewell · FETs & Power MOSFETs · MPN MSD60N50

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)28.7nC@4.5V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)146pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.24nF

Technical details

N-Channel 60V 50A 52W Surface Mount TO-252

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