Bruckewell MSD200N120

Bruckewell · FETs & Power MOSFETs · MPN MSD200N120

No reviews yet — be the first to review Bruckewell MSD200N120.

Specifications

Gate Charge(Qg)13.7nC@10V
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation69W
RDS(on)120mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5.3pF
Number1 N-channel
Input Capacitance(Ciss)872pF

Technical details

N-Channel 200V 16A 69W Surface Mount TO-252

Related FETs & Power MOSFETs