Bruckewell MSD100P12

Bruckewell · FETs & Power MOSFETs · MPN MSD100P12

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Specifications

Gate Charge(Qg)19nC@10V
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation38W
RDS(on)210mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 P-Channel
Input Capacitance(Ciss)1.228nF
TypeP-Channel

Technical details

P-Channel 100V 12A 38W Surface Mount TO-252

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