Bruckewell MSD100N25

Bruckewell · FETs & Power MOSFETs · MPN MSD100N25

No reviews yet — be the first to review Bruckewell MSD100N25.

Specifications

Configuration-
Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)137pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)48mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.848nF

Technical details

N-Channel 100V 25A 60W Surface Mount TO-252

Related FETs & Power MOSFETs