Bruckewell · FETs & Power MOSFETs · MPN MSD100N110SC
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| Gate Charge(Qg) | 28.8nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 665pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 94W |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
N-Channel 100V 60A 94W Surface Mount TO-252