Bruckewell MSB100N042SB

Bruckewell · FETs & Power MOSFETs · MPN MSB100N042SB

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Specifications

Configuration-
Gate Charge(Qg)110nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.69nF
Current - Continuous Drain(Id)150A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation275W
RDS(on)4.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 N-channel
Input Capacitance(Ciss)6.68nF

Technical details

N-Channel 100V 150A 275W Surface Mount TO-263

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