Bruckewell MSB100N023

Bruckewell · FETs & Power MOSFETs · MPN MSB100N023

No reviews yet — be the first to review Bruckewell MSB100N023.

Specifications

Configuration-
Gate Charge(Qg)192nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)250A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation278W
RDS(on)2.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number1 N-channel
Input Capacitance(Ciss)10.1nF
TypeN-Channel

Technical details

N-Channel 100V 250A 278W Surface Mount TO-263

Related FETs & Power MOSFETs