BORN SI2309S

BORN · FETs & Power MOSFETs · MPN SI2309S

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Specifications

Gate Charge(Qg)6.3nC@0V
Drain to Source Voltage60V
Output Capacitance(Coss)41pF
Current - Continuous Drain(Id)1.9A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)215mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)364pF

Technical details

P-Channel 60V 1.9A 1.4W Surface Mount SOT-23-3L

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