BORN SI2309

BORN · FETs & Power MOSFETs · MPN SI2309

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Specifications

Gate Charge(Qg)5.4nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)200mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)310pF

Technical details

P-Channel 60V 2A 0.8W Surface Mount SOT-23-3L

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