BORN SI2305

BORN · FETs & Power MOSFETs · MPN SI2305

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Specifications

Gate Charge(Qg)10nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)87pF
RDS(on)52mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)415pF

Technical details

P-Channel 20V 4.1A 1.25W Surface Mount SOT-23

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