BORN SI2302S

BORN · FETs & Power MOSFETs · MPN SI2302S

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)48mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)160pF

Technical details

N-Channel 20V 3A 0.8W Surface Mount SOT-23

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