BORN SI2301S

BORN · FETs & Power MOSFETs · MPN SI2301S

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Specifications

Gate Charge(Qg)5.3nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)140mΩ@3.3V
Number1 P-Channel
Input Capacitance(Ciss)177pF

Technical details

P-Channel 20V 2.3A 1W Surface Mount SOT-23

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