BORN SI2301F

BORN · FETs & Power MOSFETs · MPN SI2301F

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Specifications

Gate Charge(Qg)4.8nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)150mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)280pF

Technical details

P-Channel 20V 2.2A Surface Mount SOT-23

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