BORN MMBTH10

BORN · Transistors (BJTs) · MPN MMBTH10

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)650MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO3V
DC Current Gain200
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)50mA
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 20V 50mA 650MHz 200mW Surface Mount SOT-23

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