BORN BULN2803LVS

BORN · Transistors (BJTs) · MPN BULN2803LVS

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Specifications

Output Leakage Current(Icex)50uA
Collector - Emitter Voltage VCEO18V
Input Capacitiance(Ci)15pF
Reverse Leakage Current (Ir)100uA
number of channels8
Input Current(on)3.2mA
Vce Saturation(VCE(sat))2.1V@1.8V,100mA
Voltage - Forward(Vf)1.6V
Voltage - Input(Max)20V
Current - Collector(Ic)500mA
Operating Temperature-40℃~+85℃

Technical details

18V 8 500mA SOIC-18-300mil Bipolar Transistor Arrays RoHS

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