BORN BNT15N10

BORN · FETs & Power MOSFETs · MPN BNT15N10

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.5W
RDS(on)88mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)890pF
TypeN-Channel

Technical details

N-Channel 100V 15A 34.5W Surface Mount TO-252-2

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