BORN BNST02N10

BORN · FETs & Power MOSFETs · MPN BNST02N10

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)2A
Output Capacitance(Coss)38pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)326pF
TypeN-Channel

Technical details

N-Channel 100V 2A 1.25W Surface Mount SOT-23

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