BORN BMSN3139

BORN · FETs & Power MOSFETs · MPN BMSN3139

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)190mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
TypeP-Channel

Technical details

P-Channel 20V 2A 0.3W Surface Mount SOT-323

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