BORN BMQ4435P

BORN · FETs & Power MOSFETs · MPN BMQ4435P

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Specifications

Gate Charge(Qg)26.4nC
Drain to Source Voltage30V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)40A
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)19mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.23nF
TypeP-Channel

Technical details

P-Channel 30V 40A 39W Surface Mount PDFN-8L(3.3x3.3)

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