BORN BMQ03N530

BORN · FETs & Power MOSFETs · MPN BMQ03N530

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Specifications

Output Capacitance(Coss)295pF
Pd - Power Dissipation40W
Gate Charge(Qg)50nC
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF

Technical details

40W 30V 1.5V 3.9mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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