BORN BMO04N770

BORN · FETs & Power MOSFETs · MPN BMO04N770

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Specifications

Output Capacitance(Coss)359pF
Pd - Power Dissipation48W
Configuration-
Gate Charge(Qg)11.5nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 N-channel
Input Capacitance(Ciss)648pF

Technical details

48W 40V 1.5V 6mΩ@10V 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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