BORN BMI5N50

BORN · FETs & Power MOSFETs · MPN BMI5N50

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Specifications

Output Capacitance(Coss)65pF
Pd - Power Dissipation54W
Configuration-
Gate Charge(Qg)17nC
Drain to Source Voltage500V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
RDS(on)1.4Ω@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)554pF

Technical details

54W 500V 2V 1.4Ω@10V 1 N-channel N-Channel TO-252-2 Single FETs, MOSFETs RoHS

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