BORN BMI403NP1136

BORN · FETs & Power MOSFETs · MPN BMI403NP1136

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Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)50mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)950pF

Technical details

N-Channel+P-Channel Array 30V 30A 25W Surface Mount TO-252-4L

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