BORN BMI03N820

BORN · FETs & Power MOSFETs · MPN BMI03N820

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18.8nC@10V
Configuration-
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation45W
RDS(on)8.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)860pF
TypeN-Channel

Technical details

N-Channel 30V 45A 45W Surface Mount TO-252-2

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