BORN BMI02N400

BORN · FETs & Power MOSFETs · MPN BMI02N400

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)37.2nC@4.5V
Output Capacitance(Coss)415pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)395pF
RDS(on)3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.72nF
TypeN-Channel

Technical details

N-Channel 20V 80A Surface Mount TO-252-2

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