BORN BMF7N65G

BORN · FETs & Power MOSFETs · MPN BMF7N65G

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Specifications

Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)23nC@10V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)1.45Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.13nF

Technical details

650V 7A 4V 36W 1.45Ω@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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