BORN · FETs & Power MOSFETs · MPN BMF4N65
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| Drain to Source Voltage | 650V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 15nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 610pF |
| Type | N-Channel |
N-Channel 650V 4A 30W Through Hole TO-220F