BORN BMF20N65G

BORN · FETs & Power MOSFETs · MPN BMF20N65G

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Specifications

Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)58nC@10V
Current - Continuous Drain(Id)20A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.98nF
TypeN-Channel

Technical details

N-Channel 650V 20A 45W Through Hole TO-220F

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