BORN BMF18N50G

BORN · FETs & Power MOSFETs · MPN BMF18N50G

No reviews yet — be the first to review BORN BMF18N50G.

Specifications

Configuration-
Gate Charge(Qg)50.5nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.045nF
TypeN-Channel

Technical details

N-Channel 500V 18A 45W Through Hole TO-220F

Related FETs & Power MOSFETs