BORN BMF12N65G

BORN · FETs & Power MOSFETs · MPN BMF12N65G

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)14nC@10V
Configuration-
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)700mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.45nF

Technical details

N-Channel 650V 12A 42W Through Hole TO-220F

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