BORN BMF12N60G

BORN · FETs & Power MOSFETs · MPN BMF12N60G

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Specifications

Drain to Source Voltage600V
Configuration-
Gate Charge(Qg)45nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation156W
RDS(on)650mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)21pF
Number1 N-channel
Input Capacitance(Ciss)2.107nF

Technical details

N-Channel 600V 12A 156W Through Hole TO-220F

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