BORN BMF10N70G

BORN · FETs & Power MOSFETs · MPN BMF10N70G

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Specifications

Gate Charge(Qg)21.5nC@10V
Configuration-
Drain to Source Voltage700V
Output Capacitance(Coss)134pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)1.31Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF

Technical details

N-Channel 700V 10A 30W Through Hole TO-220F

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