BORN BMF10N65

BORN · FETs & Power MOSFETs · MPN BMF10N65

No reviews yet — be the first to review BORN BMF10N65.

Specifications

Output Capacitance(Coss)140pF
Pd - Power Dissipation31W
Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.72nF

Technical details

N-Channel 650V 10A 31W Through Hole TO-220F

Related FETs & Power MOSFETs