BORN · FETs & Power MOSFETs · MPN BME10N65
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| Output Capacitance(Coss) | 140pF |
|---|---|
| Pd - Power Dissipation | 150W |
| Configuration | - |
| Gate Charge(Qg) | 32nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 790mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.72nF |
150W 650V 2V 790mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS