BORN BMDFN2301

BORN · FETs & Power MOSFETs · MPN BMDFN2301

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.1nC@4.5V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)740mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation320mW
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)650mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)104pF
Type-

Technical details

P-Channel 20V 0.74A 0.32W Surface Mount DFN1006-3L

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