BORN BM8205

BORN · FETs & Power MOSFETs · MPN BM8205

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Specifications

Gate Charge(Qg)11nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)35mΩ@2.5V
Number2 N-Channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel Array 20V 4A 1.4W Surface Mount SOT-23-6L

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