BORN BM3415E

BORN · FETs & Power MOSFETs · MPN BM3415E

No reviews yet — be the first to review BORN BM3415E.

Specifications

Gate Charge(Qg)14.2nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)4.8A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)45mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)675pF
TypeP-Channel

Technical details

P-Channel 20V 4.8A 1.5W Surface Mount SOT-23

Related FETs & Power MOSFETs