BORN BM3134E

BORN · FETs & Power MOSFETs · MPN BM3134E

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)500mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)220mΩ@4.5V;290mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)79pF

Technical details

N-Channel 20V 500mA 350mW Surface Mount SOT-23

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