BORN AO3415E

BORN · FETs & Power MOSFETs · MPN AO3415E

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Specifications

Gate Charge(Qg)14.2nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.8A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W
RDS(on)65mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)85pF
Number1 P-Channel
Input Capacitance(Ciss)675pF
TypeP-Channel

Technical details

P-Channel 20V 4.8A 1.5W Surface Mount SOT-23

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