BL BLP023N10-T

BL · FETs & Power MOSFETs · MPN BLP023N10-T

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Specifications

Gate Charge(Qg)224nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)360A
Output Capacitance(Coss)1.715nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation416.6W
Reverse Transfer Capacitance (Crss@Vds)328pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.26nF
TypeN-Channel

Technical details

N-Channel 100V 360A 416.6W Surface Mount TOLL-8L

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