Bestirpower BMW65N190UC1

Bestirpower · FETs & Power MOSFETs · MPN BMW65N190UC1

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage650V
Configuration-
Output Capacitance(Coss)78pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation152W
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.69nF

Technical details

N-Channel 650V 20A 152W Through Hole TO-247

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