Bestirpower BMW65N100UC1

Bestirpower · FETs & Power MOSFETs · MPN BMW65N100UC1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)66nC
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation278W
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5.8pF
Number1 N-channel
Input Capacitance(Ciss)2.99nF
TypeN-Channel

Technical details

N-Channel 650V 35A 278W Through Hole TO-247-3

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