Bestirpower BMW65N050UE1

Bestirpower · FETs & Power MOSFETs · MPN BMW65N050UE1

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Specifications

Configuration-
Gate Charge(Qg)125nC
Drain to Source Voltage650V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation568W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)50mΩ@10V
Number-
Input Capacitance(Ciss)5.675nF

Technical details

650V 75A 4.2V 568W 50mΩ@10V N-Channel TO247-3 Single FETs, MOSFETs RoHS

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