Bestirpower BMT60N105E1

Bestirpower · FETs & Power MOSFETs · MPN BMT60N105E1

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Specifications

Gate Charge(Qg)52nC
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation260W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.27nF

Technical details

600V 31A 3.3V 260W 105mΩ@10V 1 N-channel TOLL-8 Single FETs, MOSFETs RoHS

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