Bestirpower BMP65N190UC1

Bestirpower · FETs & Power MOSFETs · MPN BMP65N190UC1

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Specifications

Output Capacitance(Coss)78pF
Pd - Power Dissipation152W
Configuration-
Drain to Source Voltage650V
Gate Charge(Qg)40nC
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.69nF

Technical details

152W 650V 20A 4V 190mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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