Bestirpower BMD80N400E1

Bestirpower · FETs & Power MOSFETs · MPN BMD80N400E1

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Specifications

Configuration-
Gate Charge(Qg)20.4nC
Drain to Source Voltage800V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation105W
RDS(on)400mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)0.29pF
Number-
Input Capacitance(Ciss)1.1346nF

Technical details

800V 13A 3.5V 105W 400mΩ@10V N-Channel DPAK Single FETs, MOSFETs RoHS

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