Bestirpower BMD70N360E2

Bestirpower · FETs & Power MOSFETs · MPN BMD70N360E2

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Specifications

Gate Charge(Qg)19nC
Drain to Source Voltage700V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation114W
RDS(on)360mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3.8pF
Number1 N-channel
Input Capacitance(Ciss)801pF
TypeN-Channel

Technical details

700V 11A 3V 114W 360mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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